Rotational Reconstruction of Sapphire (0001)
نویسندگان
چکیده
The structure of the ( √ 31 × √ 31)R ± 9 reconstructed phase on sapphire (0001) surface is investigated by means of a simulation based on the energy minimization. The interaction between Al adatoms is described with the semi-empirical manybody Sutton-Chen potential, corrected for the charge transfer between the metallic overlayer and the substrate. The interactions between the Al adatoms and sapphire substrate are described with a simple three-dimensional potential field which has the hexagonal periodicity of sapphire surface. Our energy analysis gave evidence that the structure which is observed at room temperature is in fact a frozen hightemperature structure. In accordance with the X-ray scattering, a hexagonal domain pattern separated by domain walls has been found. The Al adatoms, distributed in two monolayers, are ordered and isomorphic to metallic Al(111) in the domains and disordered in the domain walls. The main reason for the rotational reconstruction is the lattice misfit between the metallic Al and sapphire.
منابع مشابه
GaN Nucleation and Growth on Sapphire (0001): Incorporation and Interlayer Transport
GaN growth on nitridated sapphire (0001) by rf plasma-assisted metal-organic molecular-beam epitaxy is shown to exhibit a highly superlinear growth rate and a transition from strained, smooth growth to relaxed cluster growth during the first layer. A coupled rate-equation model suggests that the growth rate arises from both the site-dependent reactivity of precursor molecules and a layer-depend...
متن کاملLow Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire
Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100°C rang...
متن کاملLayer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates
Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film....
متن کاملThe role of substrate surface termination in the deposition of (111) CdTe on (0001) sapphire
The small lattice mismatch and sixfold symmetry offered by the (0001) planes of sapphire make it an ideal substrate candidate for the deposition of (111) CdTe films. There, however, exists a wide disparity in film quality among various researchers with both single crystal and highly twinned, multidomain films being reported. We have developed a pulsed laser deposition process that enables us to...
متن کاملIon-assisted nucleation and growth of GaN on sapphire„0001..
We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
متن کامل